Philips phw7n60 1 free download

File name phw7n60_1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHW7N60 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 600 V avalanche energy capability, stable ID Drain current (DC) 7 A off-state characteristics, fast Ptot Total power dissipation 147 W switching and high thermal cycling RDS(ON) Drain-source on-state resistance 1.2 performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ID Continuous drain current Tmb = 25